Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1485469 | Journal of Non-Crystalline Solids | 2007 | 5 Pages |
Abstract
In this paper we propose a new model of the EEPROM tunnel capacitance that takes into account temperature dependence. For this purpose, non-quasi-static C(V) measurements are made in order to extract the tunnel capacity physical parameters. Temperature dependence of the interface state density occupation was evaluated. Simulation of surface potential with temperature variation was implemented. We propose a complete electrical simulation of tunnel capacitance with temperature dependence. Finally, temperature EEPROM cell working simulations are presented.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Y. Zahi, R. Laffont, F. Lalande, S. Boutahar, R. Bouchakour,