Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1486329 | Journal of Non-Crystalline Solids | 2006 | 5 Pages |
Abstract
Raman backscattering and hydrogen effusion measurements were performed on compensated, highly P- and B-doped laser crystallized polycrystalline silicon. From hydrogen effusion spectra the hydrogen chemical potential, μH, is determined as a function of hydrogen concentration, which can be related to the hydrogen density-of-states distribution. Interestingly, hydrogen bonding is affected by doping of the amorphous starting material. Below the hydrogen transport states, four peaks are observed in the hydrogen density-of-states at 2.0, 2.2, 2.5 and 2.8 eV. The latest peak is not observed in B-doped samples. The hydrogen effusion results will be correlated with the results obtained from Raman backscattering measurements.
Related Topics
Physical Sciences and Engineering
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Authors
R. Saleh, N.H. Nickel, K.v. Maydell,