| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1486337 | Journal of Non-Crystalline Solids | 2006 | 4 Pages |
Abstract
Hydrogen bonding in amorphous silicon and silicon-germanium alloys is investigated using Raman and gas effusion measurements. Special emphasis is given to the influence of structural changes on H bonding that occur in the cause of hydrogen effusion measurements. The data show that the analysis of the effusion spectra in terms of a hydrogen density-of-states distribution delivers reliable results for amorphous semiconductors.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
N.H. Nickel, M. Weizman, I. Sieber, B. Yan,