Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1486339 | Journal of Non-Crystalline Solids | 2006 | 4 Pages |
Abstract
Undoped hydrogenated silicon films have been prepared from a gas mixture of silane and hydrogen, varying substrate temperature from 180-380 °C in an ultrahigh vacuum system using RFPECVD technique. XRD and Raman measurements enable us to know that the films are microcrystalline throughout the substrate temperature range. Bond formation of the SiH films at different substrate temperature is studied through different characterisation techniques like Fourier transform infrared spectroscopy and hydrogen evolution study. The infrared absorption spectroscopy and hydrogen evolution study reveal two types of growth: the formation of a void rich material at low Ts (â¼180 °C) and a compact material at comparatively higher Ts.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Sumita Mukhopadhyay, Amartya Chowdhury, Swati Ray,