Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1486365 | Journal of Non-Crystalline Solids | 2006 | 4 Pages |
Abstract
Si nanocrystals formed by electrochemical porosifying of c-Si wafers are investigated by means of the electron-paramagnetic resonance (EPR) and photoluminescence (PL) techniques. The PL spectra and transients give evidence of the photosensitization of singlet oxygen molecules by the energy transfer from excitons confined in Si nanocrystals to oxygen molecules adsorbed on the nanocrystal surfaces. The EPR experiments show that the singlet oxygen generation is accompanied by a slowing down of the spin-spin relaxation time of Si dangling bonds on the nanocrystal surfaces. This effect is explained by the transition of a large part of the adsorbed O2 molecules in their ground (triplet) states to the excited (singlet) ones. The EPR data allow us to estimate the concentration of the photosensitized singlet oxygen molecules to be on the order of 1018Â cmâ3.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
E.A. Konstantinova, V.A. Demin, A.S. Vorontzov, Yu. V. Ryabchikov, I.A. Belogorokhov, L.A. Osminkina, P.A. Forsh, P.K. Kashkarov, V. Yu. Timoshenko,