| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1486371 | Journal of Non-Crystalline Solids | 2006 | 4 Pages |
Abstract
Randomly distributed grain and grain boundaries dominate the electronic transport in hydrogenated nanocrystalline silicon films (nc-Si:H) at relatively high temperatures. At temperatures below 100 K, the effect of grain boundaries on photoconductivity is ignored and hence a standard transport model for homogeneous semiconductors can be applied to explain the experimental results. A reasonable value of μτ-product is predicted and is very close to that obtained experimentally. One of the important factors, an extent of barrier height distribution, can be also deduced from the present formulation.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
K. Shimakawa,