Complex study of mechanical properties of a-Si:H and a-SiC:H boron doped films

The aim of the present work is to provide the complex study of the mechanical properties of p-doped a-Si:H and a-SiC:H thin films prepared under different plasma conditions. For the investigation of the samples we used mainly the continuous depth sensing indentation technique (DSI), pin-on-disc test and internal stress measurement. The morphology of the thin film surface and the indentation prints are studied using optical microscopy, scanning electron microscopy (SEM) and topography mode of atomic force microscopy (AFM). The dependence of the mechanical parameters upon the deposition conditions were compared with the optoelectronic properties of studied films.