Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1486478 | Journal of Non-Crystalline Solids | 2006 | 4 Pages |
Abstract
Thin-film GaAs on glass was formed by ablating n-type GaAs with nano-second pulses at 532 nm. The deposition was done in the most straightforward way without heating the substrate. The texture of films has been investigated with X-ray measurements, spatially resolved micro-Raman spectroscopy, and atomic force microscopy. The results reveal that the film texture is of multi-phase nature consisting of randomly oriented GaAs microcrystallites, amorphous parts, and (1 1 1) zincblende migrations in the nano-regime.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
A. Erlacher, B. Ullrich, E.Y. Komarova, H. Jaeger, H.J. Haugan, G.J. Brown,