| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1486566 | Journal of Non-Crystalline Solids | 2006 | 7 Pages |
Abstract
The characteristics of nanocrystalline silicon deposited on different film substrates were studied. Through atomic force microscopy, field emission scanning electron microscopy, Raman scattering and Hall effect measurements, we investigated and compared the morphology, columnar grain size, crystallinity and Hall mobility of nanocrystalline silicon on different film substrates. The mechanisms affecting the characteristics of nanocrystalline silicon deposited to different substrates were studied in detail.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
C.Y. Lin, Y.K. Fang, S.F. Chen, C.S. Lin, T.H. Chou, S.B. Hwang, J.S. Hwang, K.I. Lin,