| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1486638 | Journal of Non-Crystalline Solids | 2005 | 4 Pages |
Abstract
Temperature dependences of the dc conductivity and thermopower of a (GaSb)38Ge24 homogeneous bulk amorphous alloy are investigated at 110–425 K and at 180–400 K, respectively. The samples were prepared by spontaneous solid-state amorphization of a quenched crystalline high-pressure phase heated from 77 to 430 K at ambient pressure. In contrast to the parent amorphous GaSb compound exhibiting an unusual combination of electrical properties, amorphous (GaSb)38Ge24 is found to be a typical p-type semiconductor well described by the conventional Mott–Davis model.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
A.I. Kolyubakin, V.E. Antonov, O.I. Barkalov, A.I. Harkunov,