| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1493515 | Optical Materials | 2016 | 4 Pages |
Abstract
•Ti-doped sapphires were grown by Czochralski technique and Verneuil technique.•Radial distribution of Ti3+ and Ti4+ concentrations were evaluated by luminescence.•Titanium distribution profiles are correlated to the relative growing techniques.
The distributions of Ti3+ and Ti4+ ions were evaluated by photoluminescence measurement in the wafers cut from different positions of the ingots grown by Czochralski and Verneuil techniques. Particular radial distributions of Ti4+ as function of the position in the ingot were observed in the crystals grown by Verneuil technique different than the crystals grown by Czochralski method.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
G. Alombert-Goget, H. Li, J. Faria, S. Labor, D. Guignier, K. Lebbou,