Nonlinear scattering by magnetically biased semiconductor layer

The nonlinear interaction of waves in the semiconductor slab illuminated by the plane waves of two tones or two Gaussian pulses with different central frequencies and lengths is examined in the self-consistent problem formulation, taking into account the nonlinear dynamics of carriers. The three-wave mixing technique is applied to study the nonlinear processes. It has been shown that the nonlinearity in passive weakly nonlinear semiconductor medium has the resistive nature associated with the dynamics of carriers. It has been shown that the nonlinear response of the magnetoactive semiconductor layer is strongly enhanced by the magnetic bias and the combinations of layer physical and geometrical parameters.