Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547675 | Physica E: Low-dimensional Systems and Nanostructures | 2007 | 5 Pages |
Abstract
In this work, the electrical and memory behaviour of metal-silicon nitride-silicon structures with an embedded nanocrystalline silicon layer, which either consists of separated silicon nanocrystals, or is a continuous nanocrystalline layer, are presented. The structures were prepared by low-pressure chemical vapour deposition (LPCVD). The effect of the duration of deposition and the structure of the nanocrystalline layer were studied. The writing/erasing behaviour was similar for all the structures, but the retention properties were much worse in the structure with a continuous nanocrystalline layer, than in the structures with separated Si nanocrystals. This indicates that Si nanocrystals play role in charge storage in the studied structures.
Related Topics
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Authors
P. Basa, Zs.J. Horváth, T. Jászi, A.E. Pap, L. Dobos, B. Pécz, L. Tóth, P. SzöllÅsi,