Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1552579 | Superlattices and Microstructures | 2016 | 10 Pages |
Abstract
Figure: (a) 3-D view, (b) schem ati c cross-sectional view and (c) circuit symb ol of n/p-E-SiNW-SB-FET. In this article an ultra steep, symmetric and dynamically configurable, electrostatically doped silicon nanowire Schottky FET (E-SiNW-SB-FET) based on dopant-free technology is investigated. It achieves the ultra steep sub-threshold slope (SS) due to the cumulative effect of weak impact-ionization induced positive feedback and electrostatic modulation of Schottky barrier heights at both source and drain terminals. A calibrated 3-D TCAD simulation results exhibit the SS of 2Â mV/dec for n-E-SiNW-SB-FET and 9Â mV/dec for p-E-SiNW-SB-FET for about five decades of current.238
Keywords
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Sangeeta Singh, Ruchir Sinha, P.N. Kondekar,