Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1552985 | Superlattices and Microstructures | 2015 | 10 Pages |
Abstract
Formation of a parasitic channel in biaxially strained Si channel p-MOSFET, degrades performance of the device. In this paper the effect of SiGe (virtual substrate) doping on formation of parasitic channel and high frequency characteristics of the strained MOSFET has been studied. Simulation results, indicate that increasing virtual substrate's doping from e.g. 4Â ÃÂ 1015Â cmâ3 to 4Â ÃÂ 1017Â cmâ3 effectively eliminates parasitic channel by reducing hole concentration from 1Â ÃÂ 1017Â cmâ3 to 1Â ÃÂ 1011Â cmâ3 in the parasitic channel. This improves MOSFET's characteristics including parasitic capacitances and channel length modulation. Also it has been demonstrated that the highest unity-gain bandwidth might be achieved at doping level of 4Â ÃÂ 1017Â cmâ3.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Mohammad Mahdi Khatami, Majid Shalchian, Mohammadreza Kolahdouz,