Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1553037 | Superlattices and Microstructures | 2015 | 6 Pages |
Abstract
An improved 4H-SiC MESFET with Î-gate and recessed p-buffer layer (ÎRP-MESFET) is proposed in this paper. The channel electric field and the gate depletion layer have been modulated by utilizing Î-gate and introducing recessed p-buffer layer simultaneously in the ÎRP-MESFET structure. The simulated results show that the drain saturation current and the breakdown voltage of the proposed structure are about 18.5% and 19.4% larger than those of the double recessed structure (DR-MESFET), respectively. Therefore, the maximum output power density of 8.17Â W/mm can be achieved, which is about 42% higher than that of the reported one. The cut-off frequency (fT) of the proposed structure is 19.8Â GHz, which is higher than that of the conventional structure due to its smaller gate-source capacitance (Cgs).
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Hujun Jia, Hang Zhang, Ding Xing, Peimiao Ma,