| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1557009 | Journal of Materials Science & Technology | 2010 | 5 Pages |
Abstract
Au/Bi3.54Nd0.46Ti3O12/Bi2Ti2O7/Si structure has been fabricated with a preferentially (111)-orientated Bi2Ti2O7 seeding layer as a ferroelectric gate of metal-ferroelectric-insulator field effect transistor. Bi3.54Nd0.46Ti3O12 and Bi3.54Nd0.46Ti3O12/Bi2Ti2O7 films are both well-crystallized when annealed at 680°C for 40 min, and have smooth, dense and crack-free surfaces. The width of memory window of the ferroelectric gate increases with increasing electric field applied to the Bi3.54Nd0.46Ti3O12 thin films. The width of memory window of Au/Bi3.54Nd0.46Ti3O12/Bi2Ti2O7/Si with seeding layer is relatively wider than that of Au/Bi3.54Nd0.46Ti3O12/Si at the same bias voltage, and the counterclockwise hysteresis curve of Au/Bi3.54Nd0.46Ti3O12/Bi2Ti2O7/Si is referred to as polarization type switching at different voltages. Bi2Ti2O7 seeding layer plays an important role in alleviating the element interdiffusion between Bi3.54Nd0.46Ti3O12 and Si.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Chemistry
Authors
Huizhong Xu, Liang Zhen, Changhong Yang, Zhuo Wang,