Article ID Journal Published Year Pages File Type
1564817 Journal of Nuclear Materials 2016 6 Pages PDF
Abstract
Thin ZrC films (<500 nm), grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser, were irradiated by 800 keV Ar ion at room temperature under a fixed flux of 1011 cm2 s−1 with fluences ranging from 1 × 1014 at/cm2 to 2 × 1015 at/cm2. Glancing incidence X-ray diffraction, X-ray reflectivity, transmission electron microscopy and nanoindentation investigations were used to study the structural modifications in the films' density, composition and mechanical properties induced by irradiation. After irradiation, the lattice parameter and crystallite size slightly increased, while the films' density decreased. Significant decreases in nanohardness and Young modulus values were also measured after irradiation at 1 × 1014 at/cm2 and 1 × 1015 at/cm2 fluences. No further major decreases were observed for a fluence of 2 × 1015 at/cm2. Scanning transmission electron microscopy and energy dispersive X-ray analysis showed a decrease in the Zr/C values in the irradiated film from surface towards the Si substrate.
Related Topics
Physical Sciences and Engineering Energy Nuclear Energy and Engineering
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