Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1565218 | Journal of Nuclear Materials | 2013 | 5 Pages |
Abstract
Using a non-destructive conductive atomic force microscope combined with the Ar+ etching technique, we demonstrate that nanoscale and conductive He bubbles are formed in the implanted layer of single-crystalline 6H-SiC irradiated with 100Â keV He+. We find that the surface swelling of irradiated SiC samples is well correlated with the growth of elliptic He bubbles in the implanted layer. First-principle calculations are performed to estimate the internal pressure of the He bubble in the void of SiC. Analysis indicates that nanoscale He bubbles acting as a captor capture the He atoms diffusing along the implanted layer at an evaluated temperature and result in the surface swelling of irradiated SiC materials.
Related Topics
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Nuclear Energy and Engineering
Authors
Hongyu Fan, Ruihuan Li, Deming Yang, Yunfeng Wu, Jinhai Niu, Qi Yang, Jijun Zhao, Dongping Liu,