| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1566893 | Journal of Nuclear Materials | 2011 | 9 Pages |
Abstract
⺠Successful creep experiment on translucent SiC wafer possible due to PyC coating. ⺠Effect of change in dose rate and applied stress on irradiation creep rate. ⺠Up to 0.37 dpa dose, swelling was due to single point defect generation. ⺠Creep rate exhibited a linear dependence on the applied tensile stress.
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Authors
Vani Shankar, Gary S. Was,