| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1566984 | Journal of Nuclear Materials | 2011 | 5 Pages |
Abstract
The distribution and nature of defects induced by H ion, He ion, and mixed-beam H and He ion implantation in China low-activation martensitic (CLAM) steel were studied by positron-annihilation spectroscopy. The evolution of vacancy-type defects in the CLAM steel was detected when the ion implantation dosage was varied. Significant differences in the S parameter-positron energy profile in response to the different implanted ions were observed. The implantation-induced defects were analyzed using VEPFIT. One type of defect was found in all ion-implanted samples.
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Authors
J. Qiu, X. Ju, Y. Xin, S. Liu, B.Y. Wang,