Ag diffusion in cubic silicon carbide

The diffusion of Ag impurities in bulk 3C-SiC is studied using ab initio methods based on density functional theory. This work is motivated by the desire to reduce transport of radioactive Ag isotopes through the SiC boundary layer in the Tristructural-Isotropic (TRISO) fuel pellet, which is a significant concern for the Very High Temperature Reactor (VHTR) nuclear reactor concept. The structure and stability of charged Ag and Ag-vacancy clusters in SiC are calculated. Relevant intrinsic SiC defect energies are also determined. The most stable state for the Ag impurity in SiC is found to be a Ag atom substituting on the Si sub-lattice and bound to a C vacancy. Bulk diffusion coefficients are estimated for different impurity states and values are all found to have very high activation energy. The impurity state with the lowest activation energy for diffusion is found to be the Ag interstitial, with an activation energy of approximately 7.9 eV. The high activation energies for Ag diffusion in bulk 3C-SiC cause Ag transport to be very slow in the bulk and suggests that observed Ag transport in this material is due to an alternative mechanism (e.g., grain boundary diffusion).