| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1568751 | Journal of Nuclear Materials | 2009 | 6 Pages |
Abstract
The influence of γ-irradiation (E = 3 MeV) over a large dose range 0.14-140 kGy on the electrical and photoelectric parameters of p-n-InSe and intrinsic oxide-p-InSe photoconvertors has been investigated. The detected changes in current-voltage characteristics, photoresponse spectra, open-circuit voltage, and short-circuit current for the structures are explained by the formation of radiation-induced point defects. A comparison to silicon photodiodes irradiated at analogous conditions has been carried out. On the basis of the absence of essential changes of the characteristics of the homo- and hetero-junctions based on III-VI layered semiconductors even at the maximum irradiation doses these junctions are recommended as radiation-resistant photodetectors for operation under γ-irradiation.
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Authors
Z.D. Kovalyuk, O.A. Politanska, V.G. Tkachenko, I.N. Maksymchuk, V.V. Dubinko, A.I. Savchuk,