Production and reaction kinetics of radiation-induced defects in α-alumina and sapphire under ion beam irradiation

The production behavior of radiation-induced defects in α-alumina and sapphire was studied by in situ luminescence measurement technique under ion beam irradiation of He+. The irradiation time dependence of the luminescence intensities of the F+ centers and F0 centers at 330 nm and 420 nm, respectively, was measured at each temperature from 298 to 523 K. By considering that the luminescence intensities represent the accumulated F+ and F0 centers, the observed irradiation time dependence was analyzed to obtain the rate constants for the production and reaction kinetics of radiation-induced defects of F-type centers.