Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1568799 | Journal of Nuclear Materials | 2008 | 6 Pages |
Abstract
Irradiation-induced Ti-rich precipitates in V-Ti and V-4Cr-4Ti alloys are studied by TEM and positron annihilation methods (positron lifetime, and coincidence Doppler broadening (CDB)). The characteristics of small defect clusters formed in V alloys containing Ti at irradiation temperatures below 300 °C have not been identified by TEM techniques. Strong interaction between vacancy and Ti solute atoms for irradiated V alloys containing Ti at irradiation temperatures from 220 to 350 °C are observed by positron lifetime measurement. The vacancy-multi Ti solute complexes in V-alloys containing Ti are definitely identified by using CDB measurement. It is suggested that ultra-fine Ti-rich precipitates or Ti segregation at periphery of dislocation loops are formed in V alloys containing Ti at irradiation temperatures below 300 °C.
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Authors
Ken-ichi Fukumoto, Hideki Matsui, Hideaki Ohkubo, Zheng Tang, Yasuyoshi Nagai, Masayuki Hasegawa,