Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1569299 | Journal of Nuclear Materials | 2007 | 5 Pages |
Abstract
The ion-induced luminescence behavior and damage processes were investigated for Cr-doped alumina (ruby, α-Al2O3: 0.5 wt% Cr) under H and He ion irradiation with incident energies from 0.2 to 3.0 MeV. The total yield of the R-line luminescence (693 nm) was proportional to the projected range of the incident H ions. However, the He induced luminescence yield was not directly related to either the projected range or the incident energy. The ion-induced luminescence efficiency for the H ion was independent of the electronic energy loss, and that for the He ion decreased with increasing the electronic energy loss. The yields of the R-line luminescence rapidly diminished at the beginning of the ion irradiation. The reduction rate of the luminescence was adequately explained in terms of the nuclear energy deposition, indicating that the R-line luminescence centers were damaged by nuclear collisions.
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Authors
Aichi Inouye, Shinji Nagata, Kentaro Toh, Bun Tsuchiya, Shunya Yamamoto, Tatsuo Shikama,