Simulation study of carbon impurity dynamics on tungsten surfaces exposed to hydrogen ions

The depth profile of C impurity deposited on a W target exposed to H+ and C+ impurities at a concentration of C: 0.8% has been calculated in terms of segregation, diffusion and chemical erosion. For the segregation, the Gibbsian model has been used. For the diffusion, a concentration dependent diffusion model (C in WC and/or C) has been utilized. For the chemical erosion, the chemical erosion yield much lower than that for the H-C system has been applied. The calculated depth profiles at 653 K and 913 K are in good agreement with the XPS data. The agreement indicates that there is a significant contribution of segregation, which shifts the maximum C concentration to the top surface in the depth profiles. On the other hand, there are little contributions from diffusion and chemical erosion, which are related closely to formation of WC in the target.