Electron-phonon heat exchange in layered nano-systems

Due to the quantization of the electronic states, both P(0) and P(1), plotted vs (Te,d) show very strong oscillations with d, forming sharp crests almost parallel to Te. From valley to crest, both P(0) and P(1) increase by more than one order of magnitude. In the valleys between the crests, P∝Te3.5−Tph3.5 in the low temperature limit, whereas on the crests P does not have a simple power law dependence on temperature. The strong modulation of P with the thickness of the film may provide a way to control the electron-phonon heat power and the power dissipation in thin metallic films. On the other hand, the surface imperfections of the metallic films can smoothen these modulations.