| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1631018 | Materials Today: Proceedings | 2015 | 6 Pages |
Abstract
Low cost nano hetero p-n junction (n-ZnO/p-Si) diode was fabricated between solution processed n-type ZnO nanoparticles and p-type Si substrate. Device was fabricated using dip coating technique and characterized by current-voltage characteristics (I-V) (under dark & UV illumination) and capacitance-voltage characteristics (C-V) under ambient condition. The junction shows good diode characteristics with a rectification ratio of 191 & 478 at 4 V and cut in voltage of 2 V and 0.8 V under dark and illumination respectively. Fabricated heterojunction diode will be used in switching, rectifier, clipper, clamper, heterojunction transistors (BJTs), field effect transistor (JFETs & MOSFETs), electronic circuitry etc.
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