Nano-cell fabrication on semiconductor utilizing self-organizational behavior of point defects induced by ion beam

The nano-fabrication is based on the author's discovery that the cellular structure is formed on the ion implanted GaSb surface [[1] N. Nitta, M. Taniwaki, T. Suzuki, Y. Hayashi, Y. Satoh and T. Yoshiie, Mater. Trans. 43 (2002) 674]. In the present work the nano-fabrication is developed using focused ion beam technique. As the top-down procedure, a two-dimensional lattice of the voids is produced under GaSb surface by precise irradiation of focused ion beam. After that, the bottom-up procedure is performed using image scanning mode by which voids get developed to cells. The effects of the ion acceleration voltage and ion dose on the development of the cell structure are determined by observing plane and cross-sectional views in a scanning electron microscope. Using the technique, possible cell dimensions are discussed.