Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1675356 | Thin Solid Films | 2006 | 4 Pages |
Abstract
We investigated the trapping properties of high κ material as the charge storage layer in non-volatile flash memory devices using a two-dimensional device simulator, Medici. The high κ material is sandwiched between two silicon oxide layers, resulting in the Silicon-Oxide-High κ-Oxide-Silicon (SOHOS) structure. The trap energy levels of the bulk electron traps in high κ material were determined. The programming and erasing voltage and time using Fowler Nordheim tunneling were estimated by simulation. The effect of deep level traps on erasing was investigated. Also, the effect of bulk traps density, thickness of block oxide and thickness of high κ material on the threshold voltage of the device was simulated.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yee Ngee Yeo, Ying Qian Wang, Santanu Kumar Samanta, Won Jong Yoo, Ganesh Samudra, Dongyue Gao, Chee Ching Chong,