Article ID Journal Published Year Pages File Type
1675795 Thin Solid Films 2008 5 Pages PDF
Abstract

The instability of threshold voltage and mobility of pentacene thin film transistors using a poly(4-vinylphenol) gate dielectric have been investigated under constant bias stress. The mobility was very stable in vacuum by exhibiting 2% variation after 6 h stress even under the high gate bias stress of VGS = − 20 V. Meanwhile, we observe a negative shift of threshold voltage under stress in vacuum. This shift is attributed to charges trapped in deep electronic states in pentacene near the gate interface. We propose a model for the negative shift of the threshold voltage and extract the hole concentration, 4.5 × 1011 cm− 2, needed to avoid the onset of stress effects, resulting in a design rule of the channel width to length ratio larger than 40.

Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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