| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1680093 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2015 | 5 Pages |
Abstract
We investigate Single-Event Transients (SET) in different designs of multiple-gate devices made of FinFETs with various geometries. Heavy ion experimental results are explained by using a thorough charge collection analysis of fast transients measured on dedicated test structures. Multi-level simulations are performed to get new insights into the charge collection mechanisms in multiple-gate devices. Implications for multiple-gate device design hardening are finally discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
M. Gaillardin, M. Raine, P. Paillet, P.C. Adell, S. Girard, O. Duhamel, F. Andrieu, S. Barraud, O. Faynot,