| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1680763 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2012 | 4 Pages |
Abstract
Interface traps at the Si-SiO2 interface have been and will be an important performance limit in many (future) semiconductor devices. In this paper, we present a study of fast neutron radiation induced changes in the density of Si-SiO2 interface-related defects. Interface related defects (Pb centers) are detected before and upon the irradiation. The density of interface-related defects is increasing with the fast neutron fluence.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
I. Capan, V. Janicki, R. Jacimovic, B. Pivac,