| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1686773 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2010 | 4 Pages |
Abstract
TiO2/Si structures were fabricated by electron beam evaporation, and exposed to electron beam irradiation to investigate their electrical properties using the high frequency capacitance-voltage measurements. It was found that samples annealed in oxygen became more radiation resistant than un-annealed samples, which can be explained by the Ti valence variations induced by radiation. The samples were characterized by X-ray diffraction to show the Ti2O3 crystalline phase transformed to anatase-crystalline phase after oxygen annealing.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Chengshi Liu, Dengxue Wu, Lili Zhao, Zhijun Liao,