| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1688206 | Vacuum | 2016 | 5 Pages |
•An intense, low energy ion beam facility at IUAC.•Consists of microwave ion source, multi-electrode extraction system and experimental chamber.•Used for ion implantation.•Samples characterized by RBS, RBS-C and NRA.
An intense low energy ion beam facility has been designed, developed at Inter University Accelerator Centre (IUAC), New Delhi. This facility comprises of a 2.45 GHz microwave ion source, multi-electrode extraction system and an experimental chamber. The facility was designed to perform experiments using intense ion beams having energy in range of a few keV to a few tens of keV. The plasma chamber was designed keeping two additional ports for plasma diagnostics. In order to deliver intense ion beams on the target with low electric field, a four-electrode extraction system has been developed. This facility has been used for 10 keV N+ & O+ ion implantation in silicon at varying doses. The implanted samples have been characterized by using Rutherford Back Scattering (RBS), RBS Channeling (RBS-C) and Nuclear Resonance Analysis (NRA).
