Characterization of sputter deposited Au/Ni/Al multilayers on Si substrates

Multilayered Au/Ni/Al thin film metallization deposited by DC sputtering on n+Si substrates has been investigated. AES depth profiling was performed to reveal the concentration depth profiles of the Au/Ni/Al multilayers before and after annealing at different temperatures in the range 623–723 K. It was found that Ni aluminide layers begin to form during heat treatments at temperatures above 623 K. In addition to this process, Ni was found to diffuse significantly through the Au layer and segregates at the surface, proportionally to the increased annealing temperature. Consequently, the Ni oxidation process was found to take place thus causing the degradation of electrical contact. On the other hand Ni diffuses faster as well toward the Si/Al interface. No contamination traces at interfaces were observed. Electrical measurements of the metallized diode forward characteristics showed minor influence of the metallization heat treatment on the series resistance. Degradations were observed only in the reverse characteristics if the annealing was performed above 723 K.