Article ID Journal Published Year Pages File Type
1690193 Vacuum 2015 5 Pages PDF
Abstract
AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with a liquid phase deposited (LPD) ZrO2 thin film as gate insulator was fabricated. Compared with the conventional HEMT, the maximum drain current increases from 492 to 627 mA/mm, and leakage current is four orders magnitude lower. The gate swing voltage and off-state breakdown were also improved while applying ZrO2 oxide layer.
Related Topics
Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
Authors
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