Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1690193 | Vacuum | 2015 | 5 Pages |
Abstract
AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with a liquid phase deposited (LPD) ZrO2 thin film as gate insulator was fabricated. Compared with the conventional HEMT, the maximum drain current increases from 492 to 627Â mA/mm, and leakage current is four orders magnitude lower. The gate swing voltage and off-state breakdown were also improved while applying ZrO2 oxide layer.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Chih-Chun Hu, Chu-An Chiu, Chien-Hua Yu, Jian-Xuan Xu, Tsu-Yi Wu, Po-Wen Sze, Chang-Luen Wu, Yeong-Her Wang,