| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1786003 | Current Applied Physics | 2013 | 9 Pages |
•A comparative analytical study is presented for BG SSGOI and BG SSOI MOSFETs.•Analytical model of threshold voltage & subthreshold current is derived.•Based on effective conduction path concept, subthreshold swing model is also developed.•Evanescent mode analysis is used for the determination of the 2D channel potential.•ATLAS simulation data are used for the verification of analytical results.
The Silicon–Germanium-on-Insulator (SGOI) and Silicon-on-Insulator (SOI) based MOS structures are spearheading the strained-Si technology. The present work compares the subthreshold characteristics of two short-channel back-gated (BG) strained-Si-on-SGOI (SSGOI) and BG strained-Si-on-Insulator (SSOI) MOSFETs, and provides some solutions to overcome the degradation in subthreshold characteristics with the unrelenting downscaling of the devices. Subthreshold behaviors of the MOS structures are based on surface potential model which is determined by solving the 2D Poisson's equation with suitable boundary conditions by evanescent mode analysis for both of the MOS structures. The closed form expressions for threshold voltage, subthreshold current and subthreshold swing have been derived for symmetrical as well as independent gate operation (IGO). In addition, the Electrostatic integrity (EI) factors for SSOI and SSGOI MOS structures have been estimated and compared with Double-Gate (DG) MOSFET. The numerical simulation results, obtained by ATLAS™, a 2D device simulator from Silvaco, have been used to assess the validity of the models.
