Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1786069 | Current Applied Physics | 2014 | 6 Pages |
Abstract
ZnO thin films and nanowires (NWs) were precisely treated by focused electron-beam (E-beam) irradiation with a line width between 200 nm and 3 μm. For both ZnO films and NWs, an increased green emission was clearly observed for the E-beam-treated parts. Using a high-resolution laser confocal microscope, the photoluminescence intensities for E-beam-treated ZnO structures increased with increasing dose 1.0 Ã 1017-1.0 Ã 1018 electrons/cm2. The resistivity of a single ZnO NW increased from 56 to 1800 Ω cm after the E-beam treatment. From the results for the annealed ZnO thin films, we analyzed that the variations in PL and resistivity were due to the formation of vacancies upon focused E-beam irradiation.
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Authors
Dong Il Kim, Young Ki Hong, Suk Ho Lee, Jeongyong Kim, Jinsoo Joo,