| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1786114 | Current Applied Physics | 2013 | 6 Pages |
Abstract
⺠Ge nanocrystals were successfully grown on surface oxidized Si(100) substrates by MBE. ⺠Increase in nanocrystal size with increasing growth temperature has been studied. ⺠Good retention properties were achieved using Al2O3 as blocking oxide in place of SiO2.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
R. Aluguri, S. Das, R.K. Singha, S.K. Ray,