| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1786123 | Current Applied Physics | 2013 | 10 Pages |
Abstract
⺠We have investigated the total dose effects of different high energy ions on Si BJT. ⺠The LET and NIEL in different layers of Si BJT are calculated using SRIM. ⺠Almost identical degradation was observed for difference LET high energy ions. ⺠Worst case total dose radiation effects can be studied using Pelletron accelerator. ⺠Ion induced degradation in I-V characteristics of BJT can be recovered by annealing.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
N. Pushpa, K.C. Praveen, A.P. Gnana Prakash, S.K. Gupta, D. Revannasiddaiah,