Article ID Journal Published Year Pages File Type
1786141 Current Applied Physics 2013 8 Pages PDF
Abstract
► nc-Si:H films were grown by RF PECVD at substrate temperatures of 80-200 °C. ► Films grown away from the gas inlet are nanocrystalline at all temperatures. ► 160 °C was the optimal substrate temperature for the growth of nc-Si:H film.
Keywords
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Preview
Low temperature plasma production of hydrogenated nanocrystalline silicon thin films
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