| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1786147 | Current Applied Physics | 2013 | 4 Pages |
Al0.31Ga0.69N/AlN/GaN/InxGa1−xN/GaN heterostructures grown with the metal-organic chemical vapor deposition (MOCVD) technique with different InxGa1−xN back-barriers with In mole fractions of 0.05 ≤ x ≤ 0.14 were investigated by using XRD measurements. Screw, edge, and total dislocations, In mole fraction of back-barriers, Al mole fraction, and the thicknesses of front-barriers and lattice parameters were calculated. Mixed state dislocations with both edge and screw type dislocations were observed. The effects of the In mole fraction difference in the back-barrier and the effect of the thickness of front-barrier on crystal quality are discussed. With the increasing In mole fraction, an increasing dislocation trend is observed that may be due to the growth temperature difference between ultrathin InxGa1−xN back-barrier and the surrounding layers.
► Determining quality of InxGa1−xN layers are important. ► Samples' growth, ultrathin layers were grown at lower temperatures instead of higher temperature grown surrounding layers. ► Edge and screw dislocations seem to increase linearly. ► By increasing In mole fraction, temperature difference becomes more effective. ► By increasing In mole fraction, increasing dislocation trend was observed.
