| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1786160 | Current Applied Physics | 2013 | 4 Pages |
The paper reports the fabrication and detailed electrical characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes. The heterojunction diodes were prepared by depositing ZnTe films on n-Si substrates. The conduction mechanism, barrier height, space charge density and width of the depletion region were determined by I–V and C–V characteristics of the heterojunction diodes. The bandgap and activation energies of n-Si and p-ZnTe were also determined and a theoretical band diagram of n-Si/p-ZnTe heterojunction was drawn based on Anderson's model.
► p-ZnTe/n-Si heterojunction was prepared by cost effective vacuum deposition method. ► Dominant conduction mechanisms in the hetrojunction were determined. ► Barrier height, carrier density and width of the depletion region were determined. ► The band diagram of the heterojunction was drawn based on Anderson model.
