| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1786192 | Current Applied Physics | 2015 | 4 Pages |
•Rhombic Co rings were fabricated by e-beam lithography, with a 1.4 μm/0.7 μm major/minor diameter and 200 nm width.•Magnetic Force microscope images show various magnetic remanent states of the rhombic ring due to an applied magnetic field.•Magnetic switching was studied by anisotropic magnetoresistance measurements and calculations.
The magnetization switching of micron-scale thin film Co rhombic rings is studied by magnetic force microscopy and electrical measurements. The rhombic rings have a 1.4 μm/0.7 μm major/minor diameter with 200 nm width. A magnetic field ranged from 130 Oe to 200 Oe causes motion of domain walls (DWs) around the ring in a direction controlled by the magnetic field orientation. In addition to the well-known ‘onion’ and ‘vortex’ states, intermediate states such as horseshoe and hard-axis onion states were formed for certain field cycles, in agreement with micromagnetic simulations and anisotropic magnetoresistance calculations. DWs induce a 0.4% resistance change when the external magnetic field is cycled.
Graphical abstractCo rhombic thin film ring and its magnetic states after applying a magnetic field.Figure optionsDownload full-size imageDownload as PowerPoint slide
