| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1786268 | Current Applied Physics | 2014 | 5 Pages |
•We model spin relaxation in single layer graphene.•The effect of e-e scattering on spin relaxation length is presented.•Spin relaxation length is found to decrease with increasing temperature.•Spin relaxation length increases with increasing drain voltage.•We studied variation of spin relaxation length with external magnetic field.
In this article, we employ the semiclassical Monte Carlo approach to study the spin polarized electron transport in single layer graphene channel. The Monte Carlo method can treat non-equilibrium carrier transport and effects of external electric and magnetic fields on carrier transport can be incorporated in the formalism. Graphene is the ideal material for spintronics application due to very low Spin Orbit Interaction. Spin relaxation in graphene is caused by D'yakonov-Perel (DP) relaxation and Elliott-Yafet (EY) relaxation. We study effect of electron electron scattering, temperature, magnetic field and driving electric field on spin relaxation length in single layer graphene. We have considered injection polarization along z-direction which is perpendicular to the plane of graphene and the magnitude of ensemble averaged spin variation is studied along the x-direction which is the transport direction. This theoretical investigation is particularly important in order to identify the factors responsible for experimentally observed spin relaxation length in graphene.
