| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1786377 | Current Applied Physics | 2013 | 5 Pages |
Nanocrystalline cadmium selenide (nc-CdSe) thin films have been prepared by thermal evaporation using the inert gas condensation (IGC) technique. Transmission electron microscopy (TEM) studies show that the CdSe nanocrystals (NCs) are spherical in shape. Constant photocurrent method (CPM) is used to determine the value of absorption coefficient in low absorption region of as-deposited, annealed and light soaked nc-CdSe thin films. Values of optical band gap (Eg) have been determined by using Tauc's relation for as-deposited, annealed and light soaked nc-CdSe thin films from the α values evaluated from reflection and transmission measurements. We have used a derivative procedure to sub-gap absorption spectra in order to get information on the energetic distribution of the occupied density of states below Fermi level. Constants such as optical gap Eg, Urbach edge Eu have been obtained from CPM spectra in as-deposited, annealed and light soaked nc-CdSe thin films. Concentration of defect states has also been calculated in as-deposited, annealed and light soaked nc-CdSe thin films.
► nc-CdSe thin films are prepared by thermal evaporation technique. ► TEM reveals the spherical nature of CdSe nanocrystals. ► Subband gap absorption coefficient is determined using CPM technique. ► Density of defect states has also been calculated.
