Analysis of electrical characteristics of Er/p-InP Schottky diode at high temperature range

We report on the temperature-dependent electrical characteristics of Er/p-InP Schottky barrier diodes. The current–voltage (I–V) and capacitance–voltage (C–V) measurements have been carried out in the temperature range of 300–400 K. Using thermionic emission (TE) theory, the zero-bias barrier height (Φbo) and ideality factor (n) are estimated from I–V characteristics. It is observed that there is a decrease in n and an increase in the Φbo with an increase in temperature. The barrier height inhomogenity at the metal/semiconductor (MS) interface resulted in Gaussian distribution of Φbo and n. The laterally homogeneous Schottky barrier height value of approximately 1.008 eV for the Er/p-InP Schottky barrier diodes is extracted from the linear relationship between the experimental zero-bias barrier heights and ideality factors. The series resistance (Rs) is calculated by Chenug's method and it is found that it increases with the decrease in temperature. The reverse-bias leakage current mechanism of Er/p-InP Schottky diode is investigated. Both Poole–Frenkel and Schottky emissions are described and discussed. Furthermore, capacitance–voltage (C–V) measurements of the Er/p-InP Schottky contacts are also carried out at room temperature in dark at different frequencies of 10, 100 and 1000 kHz. Using Terman's method, the interface state density is calculated for Er/p-InP Schottky diode at different temperatures.

► Temperature-dependent electrical characteristics of Er/p-InP diode have been studied. ► Ideality factor decreases and barrier height increases with an increase in temperature. ► The conduction current is dominated by PFE for T ≤ 325 K and by SE for T ≥ 325 K. ► It is noted that the interface state density decreases with increase in temperature. ► Er Schottky contacts are attractive for high temperature device applications.