| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1786389 | Current Applied Physics | 2013 | 5 Pages |
Abstract
⺠GaP window layer surface improved by the post-Zn diffusion for 630 nm AlGaInP LED. ⺠GaP window layer resistance decreased and hole concentration increased by the post-Zn diffusion. ⺠GaP window layer surface doping concentrations increased by the post-Zn diffusion. ⺠GaP window layer surface defects reduction is important for AlGaInP LED efficiency.
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Authors
H.J. Lee, S.U. Kim, S.J. So, Y.D. Cho, Y.J. Kim, S.C. Ahn, C.H. Lee,